Document
NSR0340V2
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
Features
• Very Low Forward Voltage Drop − 410 mV @ 100 mA • Low Reverse Current − 0.5 mA @ 25 V VR • 250 mA of Continuous Forward Current • Power Dissipation of 200 mW with Minimum Trace • Very High Switching Speed • Low Capacitance − CT = 6 pF • This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting • Camera Photo Flash • Buck and Boost dc−dc Converters • Reverse Voltage and Current Protection • Clamping & Protection
Markets
• Mobile Handsets • MP3 Players • Digital Camera and Camcorders • Notebook PCs and PDAs • GPS
MAXIMUM RATINGS
Rating Reverse Voltage
Forward Continuous Current (DC)
Non−Repetitive Peak Forward Surge Current
Symbol VR IF IFSM
Value 40 250 1.0
Unit Vdc mA
A
ESD Rating: Human Body Model Machine Model
ESD
Class 2 Class A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 VOLT SCHOTTKY BARRIER DIODE
1 CATHODE
2 ANODE
2
1 SOD−523 CASE 502
MARKING DIAGRAM
AD M G 1 G2
AD = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation position may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSR0340V2T1G SOD−523 3000 / Tape & Reel (Pb−Free)
NSR0340V2T5G SOD−523 8000 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 1
1
Publication Order Number: NSR0340V2T1/D
NSR0340V2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C
RPqDJA
600 200
Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C
RPqDJA
300 400
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V)
IR
Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA)
VF
Total Capacitance (VR = 10 V, f = 1 MHz)
CT
Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA)
trr
Min
Typ 0.2 0.5 1.5 310 410 470 6.0 5.0
Unit °C/W mW °C/W mW
°C
Max Unit mA
1.0 3.0 6.0
mV 350 450 510
pF ns
DC Current + Source −
0.1 mF
tr tp 0V
10%
750 mH
50 W Output Pulse
Generator
0.1 mF
Adjust for IRM
IF DUT
VR 90%
Pulse Generator Output
IF
trr
50 W Input Oscilloscope
RL = 50 W
Current Transformer
IRM iR(REC) = 1 mA Output Pulse
(IF = IRM = 10 mA; measured at iR(REC) = 1 mA)
1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA. 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. 3. Pulse Generator transition time << trr. 4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. 5. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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IF, FORWARD CURRENT (mA) CT, TOTAL CAPACITANCE (pF)
IR, REVERSE CURRENT (mA)
NSR0340V2
1000
100 125°C
10 150°C
1
0.1
85°C 25°C
−40°C
0.01 0
0.1 0.2 0.3 0.4 VF, FORWARD VOLTAGE (V) Figure 2. Forward Voltage
30
0.5
10000
1000 150°C
100 125°C 10 85°C 1
0.1 25°C 0.01
0.001 0.0001
−40°C
0.00001 0.6 0
5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Leakage Current
25 TA = 25°C
20
15
10
5
0 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Figure 4. Total Capacitance
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NSR0340V2
PACKAGE DIMENSIONS
−X− D
−Y−
2X b 0.08 M
1
XY TOP VIEW
2
E
A
c HE SIDE VIEW 2X L
SOD−523 CASE 502 ISSUE E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS DIM MIN NOM MAX A 0.50 0.60 0.70
b 0.25 0.30 0.35 c 0.07 0.14 0.20 D 1.10 1.20 1.30 E 0.70 0.80 0.90 H E 1.50 1.60 1.70 L 0.30 REF L2 0.15 0.20 0.25
RECOMMENDED SOLDERING FOOTPRINT*
2X
0.48
1.80
2X
0.40
2X L2
BOTTOM VIEW
PACKAGE O.