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NSR0340V2 Dataheets PDF



Part Number NSR0340V2
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Schottky Barrier Diode
Datasheet NSR0340V2 DatasheetNSR0340V2 Datasheet (PDF)

NSR0340V2 Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Very Low Forward Voltage Drop − 410 mV @ 100 mA • Low Reverse Current − 0.5 mA @ 25 V VR • 25.

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NSR0340V2 Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Very Low Forward Voltage Drop − 410 mV @ 100 mA • Low Reverse Current − 0.5 mA @ 25 V VR • 250 mA of Continuous Forward Current • Power Dissipation of 200 mW with Minimum Trace • Very High Switching Speed • Low Capacitance − CT = 6 pF • This is a Pb−Free Device Typical Applications • LCD and Keypad Backlighting • Camera Photo Flash • Buck and Boost dc−dc Converters • Reverse Voltage and Current Protection • Clamping & Protection Markets • Mobile Handsets • MP3 Players • Digital Camera and Camcorders • Notebook PCs and PDAs • GPS MAXIMUM RATINGS Rating Reverse Voltage Forward Continuous Current (DC) Non−Repetitive Peak Forward Surge Current Symbol VR IF IFSM Value 40 250 1.0 Unit Vdc mA A ESD Rating: Human Body Model Machine Model ESD Class 2 Class A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 40 VOLT SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE 2 1 SOD−523 CASE 502 MARKING DIAGRAM AD M G 1 G2 AD = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation position may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSR0340V2T1G SOD−523 3000 / Tape & Reel (Pb−Free) NSR0340V2T5G SOD−523 8000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 1 1 Publication Order Number: NSR0340V2T1/D NSR0340V2 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C RPqDJA 600 200 Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RPqDJA 300 400 Junction and Storage Temperature Range TJ, Tstg −55 to +150 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF Total Capacitance (VR = 10 V, f = 1 MHz) CT Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr Min Typ 0.2 0.5 1.5 310 410 470 6.0 5.0 Unit °C/W mW °C/W mW °C Max Unit mA 1.0 3.0 6.0 mV 350 450 510 pF ns DC Current + Source − 0.1 mF tr tp 0V 10% 750 mH 50 W Output Pulse Generator 0.1 mF Adjust for IRM IF DUT VR 90% Pulse Generator Output IF trr 50 W Input Oscilloscope RL = 50 W Current Transformer IRM iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) 1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA. 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. 3. Pulse Generator transition time << trr. 4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. 5. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 IF, FORWARD CURRENT (mA) CT, TOTAL CAPACITANCE (pF) IR, REVERSE CURRENT (mA) NSR0340V2 1000 100 125°C 10 150°C 1 0.1 85°C 25°C −40°C 0.01 0 0.1 0.2 0.3 0.4 VF, FORWARD VOLTAGE (V) Figure 2. Forward Voltage 30 0.5 10000 1000 150°C 100 125°C 10 85°C 1 0.1 25°C 0.01 0.001 0.0001 −40°C 0.00001 0.6 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Leakage Current 25 TA = 25°C 20 15 10 5 0 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Figure 4. Total Capacitance http://onsemi.com 3 NSR0340V2 PACKAGE DIMENSIONS −X− D −Y− 2X b 0.08 M 1 XY TOP VIEW 2 E A c HE SIDE VIEW 2X L SOD−523 CASE 502 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN NOM MAX A 0.50 0.60 0.70 b 0.25 0.30 0.35 c 0.07 0.14 0.20 D 1.10 1.20 1.30 E 0.70 0.80 0.90 H E 1.50 1.60 1.70 L 0.30 REF L2 0.15 0.20 0.25 RECOMMENDED SOLDERING FOOTPRINT* 2X 0.48 1.80 2X 0.40 2X L2 BOTTOM VIEW PACKAGE O.


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