FDS5692Z

FDS5692Z N-Channel UltraFET Trench® MOSFET February 2006 FDS5692Z N-Channel UltraFET Trench® MOSFET 50V, 5.8A, 24mΩ General Description Features This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A „ Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.6A „ ESD protection diode (note 3) Applications „ Low Qgd „ DC/DC converter „ Fast switching speed D D D D SO-8 G SS S 5 6 7 8 MOSFET Maximum Ratings TA=25oC unless otherwise noted Symbol VDS VGS ID Drain-Source Voltage Parameter Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed EAS Single Pulse Avalanche Energy PD UltraFET Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Package Reel Size FDS5692Z FDS5692Z SO-8 13” ©2006 Fairchild Semiconductor Corporation FDS5692Z Rev C(W) 4 3 2 1 Ratings 50 ± 20 5.8 40 72 2.5 1.2 1.1 –55 to 150 50 125 25 Units V V A mJ W °C °C/W Tape width 12mm Quantity 2500units www.fairchildse...