FDD5810

FDD5810 N-Channel Logic Level Trench® MOSFET MPLEMENTATION October 2007 FDD5810 N-Channel Logic Level Trench® MOSFET 60V, 36A, 27mΩ Features „ RDS(ON) = 22mΩ (Typ.), VGS = 5V, ID = 29A „ Qg(5) = 13nC (Typ.), VGS = 5V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse / Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Motor / Body Load Control „ ABS Systems „ Powertrain Management „ Injection System „ DC-DC converters and Off-line UPS „ Distributed Power Architecture and VRMs „ Primary Switch for 12V and 24V systems AD FREE I LE D G S DTO-P-2A5K2 (TO-252) D G S ©2006 Fairchild Semiconductor Corporation FDD5810 Rev. A (W) 1 www.fairchildsemi.com FDD5810 N-Channel Logic Level Trench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Drain Current Continuous (VGS = 5V) Continuous (TA = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Maximum Thermal resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Package Marking and Ordering Information Device Marking FDD5810 Device FDD5810 Package TO-252AA Reel Size 330mm Ratings 60 ±20 37 33 7.4 Figure 4 45 72 0.48 -55 to 175 2.1 52 Tape Wid...