Small Signal MOSFET
1HP04CH
Small Signal MOSFET –100V, 18Ω, –170mA, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s...
Description
1HP04CH
Small Signal MOSFET –100V, 18Ω, –170mA, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features High Voltage (100V) 4V drive High Speed Switching and Low Loss ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance
Typical Applications Lithium-ion Battery Charging and Discharging Cell Balance
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−100
V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID −170 mA
Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1%
IDP
−680 mA
Power Dissipation
When mounted on ceramic substrate (900mm2 × 0.8mm)
PD
0.6 W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm)
Symbol RθJA
Value
Unit
208 °C/W
www.onsemi.com
VDSS −100V
RDS(on) Max 18Ω@ −10V 21Ω@ −4V
ID Max −170mA
ELECTRICAL CONNECTION P-Channel
3
1 1 : Gate 2 : Source 3 : Drain
2
PA...
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