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SBE812

ON Semiconductor

Schottky Barrier Diode

Ordering number : EN8966A SBE812 Schottky Barrier Diode 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode http:...


ON Semiconductor

SBE812

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Description
Ordering number : EN8966A SBE812 Schottky Barrier Diode 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode http://onsemi.com Applications High frequency rectification (switching regulators, converters, choppers) Features Small switching noise Low leakage current and high reliability due to highly reliable planar structure Ultrasmall package allows applied sets to be made small and thin Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj 50Hz sine wave, 1 cycle Storage Temperature Tstg Ratings 60 65 1.0 10 --55 to +125 --55 to +125 Unit V V A A °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7012-001 8 7 65 0.3 0.15 SBE812-TL-E Product & Package Information Package : VEC8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 2.8 0.25 2.3 0.25 0.07 0.75 1234 0.65 2.9 1 : Anode1 2 : No Contact 3 : Anode2 4 : No Contact 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 VEC8 SA LOT No. TL Electrical Connection 8765 1234 Se...




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