SCH1435

SCH1435 Power MOSFET 30V, 89mΩ, 3A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance 1.8V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) Typical Applications Load Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 12 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value Unit 156.2 °C/W www.onsemi.com VDSS 30V RDS(on) Max 89mΩ@ 4.5V 126mΩ@ 2.5V 195mΩ@ 1.8V ID Max 3A ELECTRICAL CONNECTION N-Channel 1, 2, 5, 6 1 : Drain 2 : Drain 3 3 : Gate 4 : Source ...