SCH1439

SCH1439 Power MOSFET 30V, 72mΩ, 3.5A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features  Low On-Resistance  4V drive  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance  Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) Typical Applications  Load Switch  Battery Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) PW  10s, duty cycle  1% IDP 14 A Power Dissipation When mounted on ceramic substrate (900mm2  0.8mm) PD 1W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (900mm2  0.8mm) Symbol RJA Value Unit 125 C/W www.onsemi.com VDSS 30V RDS(on) Max 72mΩ@ 10V 110mΩ@ 4.5V 128mΩ@ 4V ID Max 3.5A ELECTRICAL CONNECTION N-Channel 1, 2, 5, 6 1 : Drain 2 : Drain 3 3 : Gat...