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STK984-190-E Dataheets PDF



Part Number STK984-190-E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power Module for 3-phase Brushless DC Motor
Datasheet STK984-190-E DatasheetSTK984-190-E Datasheet (PDF)

STK984-190-E Advance Information Power Module for 3-phase Brushless DC Motor for Automotive Overview The STK984-190-E is a Power Module designed to be used in brush-less DC motor. www.onsemi.com Function  It is possible to make seven MOSFETs 1 small packages by heat dissipation substrate and transfer mold technology. Specifications Absolute Maximum Ratings at Tc = 25C Parameter Drain−to−Source Voltage Symbol VDSS Conditions Control Input Voltage VIN max Gate COM to +B, Gate 1H to 1,.

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STK984-190-E Advance Information Power Module for 3-phase Brushless DC Motor for Automotive Overview The STK984-190-E is a Power Module designed to be used in brush-less DC motor. www.onsemi.com Function  It is possible to make seven MOSFETs 1 small packages by heat dissipation substrate and transfer mold technology. Specifications Absolute Maximum Ratings at Tc = 25C Parameter Drain−to−Source Voltage Symbol VDSS Conditions Control Input Voltage VIN max Gate COM to +B, Gate 1H to 1, Gate 2H to 2, Gate 3H to 3, Gate 1L, Gate 2L, Gate 3L to GND Continuous Drain Current ID max DC Pulsed Drain Current ID pulse Pulse ( tp = 10 μs) Power Dissipation Pd max Each channel Tc=25℃ Junction Temperature Tj max Semiconductor Device Operating Temperature Tc Substrate Temperature Storage Temperature Tstg - Ratings 40 +/20 30 85 36 175 40 to 150 40 to 150 Unit V V A A W C C C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Recommended Operating Conditions at 40C ≤ Tc ≤ 125C Parameter Symbol Conditions Supply Voltage Control Input Voltage V+B max VIN Drain Current Operating Substrate Temperature ID Tc +B to GND Gate COM to +B, Gate 1H to 1, Gate 2H to 2, Gate 3H to 3, Gate 1L, Gate 2L, Gate 3L to GND Tc=125℃, Gate HU to LW=10V Thick Film IC Substrate Temperature min Ratings typ max Unit 8 13.5 18 V 10 18 V - - 25 A 40 - 125 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Thermal Resistance Parameter Chip-Case Resistance Symbol Θj-c Conditions Junction-to-backside of the substrate MOSFET/ch Ratings min. typ. max. Unit - - 4.1 C /W This document contains information on a new product. Specifications and information herein are subject to change without notice. ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2015 October 2015 - Rev. P0 1 Publication Order Number : STK984-190-E/D STK984-190-E Electrical Characteristics at Ta  25C Parameter Symbol Conditions min Ratings typ max Unit Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=40V - - 1.0 μA Gate Threshold Voltage Output Saturation Voltage / Each FET (incudes the wiring resistance) VGS(TH) VDS(sat) VGS=VDS, ID=250μA VGS=10V, ID=30A 13/14 to 18/19 pin , 13/14 to 10/12 pin 13/14 to 8/9 pin , 13/14 to 2/3 pin 10/12 to 5/6 pin , 8/9 to 5/6 pin 2/3 to 5/6 pin 1.5 - 0.285 3.5 0.38 V V Forward Diode Voltage VSD VGS=0V, ID=30A - 0.96 1.4 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Charges, Capacitances (Note1) Input Capacitance Ciss Total Gate Charge Qg Note 1 : Ciss & Qg : Design reference value VGS=0V, f=1.0MHz VDS=25V VGS=10V, VDS=32V ID=30A - 1725 - pF - 33 80 nC www.onsemi.com 2 Package Dimensions unit : mm MODULE SPCM24 29.6x18.2 DIP S3 CASE MODBL ISSUE O STK984-190-E www.onsemi.com 3 STK984-190-E Pin Assignment Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Pin Name 3-sense 3 3 GND-sense GND GND 2-sense 2 2 1 1-sense 1 +B_C +B_C NC NC COM-sense +B +B Gate-COM NC Gate-1H NC NC NC Gate-1L NC Gate-2H NC NC NC Gate-3H NC Gate-2L NC NC NC Gate-3L Description Sense_Upper_3_Source 3 phase Output 3 phase Output Sense_GND GND GND Sense_Upper_2_Source 2 phase Output 2 phase Output 1 phase Output Sense_Upper_1_Source 1 phase Output Power Supply Common Power Supply Common Sense_Power Supply Common - Power Supply Power Supply Common_Gate - Upper_1_Gate - - Lower_1_Gate - Upper_2_Gate Upper_3_Gate Lower_2_Gate Lower_3_Gate - - - www.onsemi.com 4 Block Diagram STK984-190-E The terminal to give next can change 1 terminal to the Sense terminal by an arbitrary change in the group of 3 output common terminal. 1 terminal within each group. 1, 2, 3 terminal, 4, 5, 6 terminal, 7, 8, 9 terminal, 10, 11, 12 terminal, 17, 18 and 19 of the terminal www.onsemi.com 5 Application Circuit Example +B_MOS WH VH UH Pre-driver WL VL UL STK984-190-E STK984-190-E +B + U V 3BLDCM W www.onsemi.com 6 Characteristics (Typ) 1. VDS – Tj (Typ) VGS=10V STK984-190-E 2. VDS – VGS (Typ) Tj=175˚C 3. VSD (TYP) – Tj (Typ) 4. Derating Curve 5. Switching Loss – Drain current (Typ) Tj=175˚C, Id=30A, Rg=51Ω, L=40H 6. Switching Loss – Gate Resistance (Typ) Tj=175˚C, Id=30A, L=40H 7. Thermal resistance (Typ) 8. ASO (Tc=125 ˚C) .


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