Document
STK984-190-E
Advance Information Power Module for 3-phase Brushless DC Motor for Automotive
Overview The STK984-190-E is a Power Module designed to be used in brush-less DC motor.
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Function It is possible to make seven MOSFETs 1 small packages by heat dissipation substrate and transfer mold technology.
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter Drain−to−Source Voltage
Symbol VDSS
Conditions
Control Input Voltage
VIN max
Gate COM to +B, Gate 1H to 1, Gate 2H to 2, Gate 3H to 3,
Gate 1L, Gate 2L, Gate 3L to GND
Continuous Drain Current
ID max
DC
Pulsed Drain Current
ID pulse
Pulse ( tp = 10 μs)
Power Dissipation
Pd max
Each channel
Tc=25℃
Junction Temperature
Tj max
Semiconductor Device
Operating Temperature
Tc
Substrate Temperature
Storage Temperature
Tstg
-
Ratings
40
+/20
30 85 36 175 40 to 150 40 to 150
Unit V
V
A A W C C C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Recommended Operating Conditions at 40C ≤ Tc ≤ 125C
Parameter
Symbol
Conditions
Supply Voltage Control Input Voltage
V+B max VIN
Drain Current Operating Substrate Temperature
ID Tc
+B to GND
Gate COM to +B, Gate 1H to 1, Gate 2H to 2, Gate 3H to 3, Gate 1L, Gate 2L, Gate 3L to GND Tc=125℃, Gate HU to LW=10V Thick Film IC Substrate Temperature
min
Ratings typ
max Unit
8 13.5 18 V
10 18 V
- - 25 A 40 - 125 C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
Thermal Resistance
Parameter
Chip-Case Resistance
Symbol Θj-c
Conditions
Junction-to-backside of the substrate MOSFET/ch
Ratings
min.
typ.
max.
Unit
- - 4.1 C /W
This document contains information on a new product. Specifications and information herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 October 2015 - Rev. P0
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Publication Order Number : STK984-190-E/D
STK984-190-E
Electrical Characteristics at Ta 25C
Parameter
Symbol
Conditions
min
Ratings typ
max
Unit
Zero Gate Voltage Drain Current
IDSS
VGS=0V, VDS=40V
- - 1.0 μA
Gate Threshold Voltage
Output Saturation Voltage / Each FET (incudes the wiring resistance)
VGS(TH) VDS(sat)
VGS=VDS, ID=250μA VGS=10V, ID=30A
13/14 to 18/19 pin , 13/14 to 10/12 pin 13/14 to 8/9 pin , 13/14 to 2/3 pin 10/12 to 5/6 pin , 8/9 to 5/6 pin 2/3 to 5/6 pin
1.5 -
0.285
3.5 0.38
V V
Forward Diode Voltage
VSD
VGS=0V, ID=30A
- 0.96 1.4 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Charges, Capacitances (Note1)
Input Capacitance
Ciss
Total Gate Charge
Qg
Note 1 : Ciss & Qg : Design reference value
VGS=0V, f=1.0MHz VDS=25V
VGS=10V, VDS=32V ID=30A
- 1725 - pF - 33 80 nC
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Package Dimensions unit : mm
MODULE SPCM24 29.6x18.2 DIP S3 CASE MODBL ISSUE O
STK984-190-E
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STK984-190-E
Pin Assignment
Pin No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Pin Name
3-sense 3 3
GND-sense GND GND
2-sense 2 2 1
1-sense 1
+B_C +B_C
NC NC COM-sense +B +B Gate-COM NC Gate-1H NC NC NC Gate-1L NC Gate-2H NC NC NC Gate-3H NC Gate-2L NC NC NC Gate-3L
Description
Sense_Upper_3_Source 3 phase Output 3 phase Output Sense_GND
GND
GND Sense_Upper_2_Source
2 phase Output 2 phase Output 1 phase Output Sense_Upper_1_Source
1 phase Output Power Supply Common
Power Supply Common
Sense_Power Supply Common
-
Power Supply Power Supply Common_Gate
-
Upper_1_Gate
-
-
Lower_1_Gate
-
Upper_2_Gate
Upper_3_Gate Lower_2_Gate
Lower_3_Gate
-
-
-
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Block Diagram
STK984-190-E
The terminal to give next can change 1 terminal to the Sense terminal by an arbitrary change in the group of 3 output common terminal. 1 terminal within each group. 1, 2, 3 terminal, 4, 5, 6 terminal, 7, 8, 9 terminal, 10, 11, 12 terminal, 17, 18 and 19 of the terminal
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Application Circuit Example
+B_MOS WH VH UH
Pre-driver
WL VL UL
STK984-190-E
STK984-190-E
+B
+
U
V 3BLDCM
W
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Characteristics (Typ) 1. VDS – Tj (Typ)
VGS=10V
STK984-190-E
2. VDS – VGS (Typ) Tj=175˚C
3. VSD (TYP) – Tj (Typ)
4. Derating Curve
5. Switching Loss – Drain current (Typ) Tj=175˚C, Id=30A, Rg=51Ω, L=40H
6. Switching Loss – Gate Resistance (Typ) Tj=175˚C, Id=30A, L=40H
7. Thermal resistance (Typ)
8. ASO (Tc=125 ˚C)
.