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NSBA114TDP6 Dataheets PDF



Part Number NSBA114TDP6
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual PNP Bias Resistor Transistors
Datasheet NSBA114TDP6 DatasheetNSBA114TDP6 Datasheet (PDF)

MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrati.

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MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features  Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable  These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C, common for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 5 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping† MUN5115DW1T1G, SMUN5115DW1T1G SOT−363 3,000/Tape & Reel NSBA114TDXV6T1G SOT−563 4,000/Tape & Reel NSBA114TDXV6T5G SOT−563 8,000/Tape & Reel NSBA114TDP6T5G SOT−963 8,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 http://onsemi.com PIN CONNECTIONS (3) (2) (1) R1 Q1 R2 R1 (4) (5) R2 Q2 (6) MARKING DIAGRAMS SOT−363 CASE 419B 6 0E M G G 1 SOT−563 CASE 463A 0E M G G 1 SOT−963 CASE 527AD T MG G 1 0E/T M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Publication Order Number: DTA114TD/D MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 THERMAL CHARACTERISTICS Characteristic Symbol MUN5115DW1 (SOT−363) ONE JUNCTION HEATED Total Device Dissipation TA = 25C Derate above 25C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA MUN5115DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25C Derate above 25C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL Junction and Storage Temperature Range NSBA114TDXV6 (SOT−563) ONE JUNCTION HEATED TJ, Tstg Total Device Dissipation TA = 25C Derate above 25C (Note 1) (Note 1) PD Thermal Resistance, Junction to Ambient (Note 1) RqJA NSBA114TDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25C Derate above 25C (Note 1) (Note 1) PD Thermal Resistance, Junction to Ambient (Note 1) RqJA Junction and Storage Temperature Range NSBA114TDP6 (SOT−963) ONE JUNCTION HEATED TJ, Tstg Total Device Dissipation TA = 25C Derate above 25C (Note 4) (Note 5) (Note 4) (Note 5) PD Thermal Resistance, Junction to Ambient (Note 4) (Note 5) RqJA NSBA114TDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25C Derate above 25C (Note 4) (Note 5) (Note 4) (Note 5) PD Thermal Resistance, Junction to Ambient (Note 4) (Note 5) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0  1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 4. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 5. FR−4 @ 500 mm2, 1 oz. copper traces, still air. Max 187 256 1.5 2.0 670 490 250 385 2.0 3.0 493 325 188 208 −55 to +150 357 2.9 350 500 4.0 250 −55 to +150 231 269 1.9 2.2 540 464 339 408 2.7 3.3 369 306 −55 to +150 Unit mW mW/C C/W mW mW/C C/W C/W C mW mW/C C/W mW mW/C C/W C MW mW/C C/W MW mW/C C/W C http://onsemi.com 2 MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 ELECTRICAL CHARACTERISTICS (TA = 25C, common for Q1 and Q2, unless otherwise noted) Characteristic Symbol Min Typ OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − Collector-Emitter Breakdown Voltage (Note 6) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − ON CHARACTERISTICS DC Curre.


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