Document
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5115DW1T1G, SMUN5115DW1T1G
SOT−363
3,000/Tape & Reel
NSBA114TDXV6T1G
SOT−563
4,000/Tape & Reel
NSBA114TDXV6T5G
SOT−563
8,000/Tape & Reel
NSBA114TDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
http://onsemi.com PIN CONNECTIONS
(3) (2) (1)
R1 Q1
R2 R1 (4) (5)
R2 Q2 (6)
MARKING DIAGRAMS
SOT−363 CASE 419B
6
0E M G G
1
SOT−563 CASE 463A
0E M G G
1
SOT−963 CASE 527AD
T
MG G 1
0E/T M
G
= Specific Device Code = Date Code* = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
Publication Order Number: DTA114TD/D
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5115DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation TA = 25C Derate above 25C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
MUN5115DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25C Derate above 25C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
Thermal Resistance, Junction to Lead
(Note 1) (Note 2)
RqJL
Junction and Storage Temperature Range NSBA114TDXV6 (SOT−563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation TA = 25C Derate above 25C
(Note 1) (Note 1)
PD
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
NSBA114TDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25C Derate above 25C
(Note 1) (Note 1)
PD
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range NSBA114TDP6 (SOT−963) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation TA = 25C Derate above 25C
(Note 4) (Note 5) (Note 4) (Note 5)
PD
Thermal Resistance, Junction to Ambient
(Note 4) (Note 5)
RqJA
NSBA114TDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25C Derate above 25C
(Note 4) (Note 5) (Note 4) (Note 5)
PD
Thermal Resistance, Junction to Ambient
(Note 4) (Note 5)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 4. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Max
187 256 1.5 2.0 670 490
250 385 2.0 3.0 493 325 188 208 −55 to +150
357 2.9 350
500 4.0 250 −55 to +150
231 269 1.9 2.2 540 464
339 408 2.7 3.3 369 306 −55 to +150
Unit
mW mW/C C/W
mW mW/C C/W C/W
C
mW mW/C C/W
mW mW/C C/W
C
MW mW/C C/W
MW mW/C C/W
C
http://onsemi.com 2
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
ELECTRICAL CHARACTERISTICS (TA = 25C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
IEBO
−
−
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
Collector-Emitter Breakdown Voltage (Note 6) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
ON CHARACTERISTICS
DC Curre.