NTMFD4C50N

NTMFD4C50N Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, Dual N−Channel SO8FL Features Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications DC−DC Converters System Voltage Rails Point of Load http://onsemi.com V(BR)DSS Q1 Top FET 30 V Q2 Bottom FET 30 V RDS(ON) MAX 7.3 mW @ 10 V 10.8 mW @ 4.5 V 3.4 mW @ 10 V 5.2 mW @ 4.5 V ID MAX 18 A 27 A D1 (2, 3, 4, 9) (1) G1 S1/D2 (10) © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 2 (8) G2 S2 (5, 6, 7) PIN CONNECTIONS D1 4 5 S2 D1 3 D1 2 9 10 D1 S1/D2 6 S2 7 S2 G1 1 (Bottom View) 8 G2 MARKING DIAGRAM 1 DFN8 CASE 506BX 4C50N AYWZZ 1 4C50N = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. 1 Publication Order Number: NTMFD4C50N/D NTMFD4C50N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Drain−to−Source Voltage Q1 VDSS 30 V Q2 Gate−to−Source Voltage Gate−to−Source Voltage Q1 VGS Q2 ±20 V Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) TA = 25°C TA = 85°C TA = 25°C TA = 85°C TA = 25°C Q1 Q2 Q1 Q2 ID PD 12 8.6 A 18 13 1.88 W 1.97 Continuous Drain Current RqJA ≤ 10 s (Note 1) Po...