BCX70GLT1

BCX70GLT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 45 Vdc 45 Vdc 5.0 Vdc 200 mAdc Characteristic Total Device Dissipation FR− 5 Board(1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter −Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. http://onsemi.com 3 1 2 CASE 318 −08, STYLE 6 SOT−23 (TO −236) COLLECTOR 3 1 BASE 2 EMITTER Symbol Min V(BR)CEO V(BR)EBO ICES IEBO 45 5.0 — — — Max Unit — Vdc — Vdc 20 nAdc 20 mAdc 20 nAdc © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: BCX70GLT1/D BCX70GLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic S...