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LB11660FV Dataheets PDF



Part Number LB11660FV
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Half-pre Motor Driver Single-Phase Full-Wave
Datasheet LB11660FV DatasheetLB11660FV Datasheet (PDF)

LB11660FV Monolithic Digital IC Half-pre Motor Driver Single-Phase Full-Wave, for Fan Motor Overview The LB11660FV is a single-phase bipolar drive half-predriver motor driver that can easily implement a direct PWM driver motor driver circuit with excellent efficiency. The LB11660FV is particularly well suited for the miniature fans used in servers. Features  Single-phase full-wave drive (15V, 1.5A transistors are built in) Half predriver with integrated high side transistor  Built-in variable .

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LB11660FV Monolithic Digital IC Half-pre Motor Driver Single-Phase Full-Wave, for Fan Motor Overview The LB11660FV is a single-phase bipolar drive half-predriver motor driver that can easily implement a direct PWM driver motor driver circuit with excellent efficiency. The LB11660FV is particularly well suited for the miniature fans used in servers. Features  Single-phase full-wave drive (15V, 1.5A transistors are built in) Half predriver with integrated high side transistor  Built-in variable speed function controlled by an external input The LB11660FV can implement quiet, low-vibration variable speed control using externally clocked high side transistor direct PWM drive.  Minimum speed setting pin  Current limiter circuit (The limit value is determined by Rf; IO = 1A when RF = 0.5)  Built-in kickback absorption circuit  Soft switching circuit makes low current consumption, low loss, and low noise drive possible at phase switching  Built-in HB  Built-in lock protection and automatic recovery circuits (built-in on/off ratio switching circuit controlled by the supply voltage)  FG (speed detection) output  Built-in thermal protection circuit (design guarantee) www.onsemi.com SSOP16 (225mil) ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2015 August 2015 - Rev. 1 1 Publication Order Number : LB11660FV/D LB11660FV Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings VCC maximum supply voltage VM maximum supply voltage OUT pin maximum output current OUT pin output voltage 1 OUT pin output voltage 2 PRE pin maximum source current PRE pin maximum sink current VCC max VM max IOUT max Rf  0.39 VOUT max 1 VOUT max 2 IPSO max T  0.4s IPSI max 20 20 1.5 20 26.5 30 7 PRE pin output voltage VP max 20 HB maximum output current VTH input pin voltage HB max VTH max 10 7 FG output pin voltage FG output current Allowable power dissipation Operating temperature Storage temperature VFG max IFG max Pd max Topr Tstg When mounted on a circuit board *1 *2 18 10 0.8 30 to +90 55 to +150 *1 Specified circuit board : 114.3  76.1  1.6mm3, glass epoxy. *2: Tj max is 150°C. This device must be used under conditions such that the chip temperature does not exceed Tj = 150°C during operation. Unit V V A V V mA mA V mA V V mA W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Recommended Operating Conditions at Ta = 25C Parameter VCC supply voltage VM supply voltage Current limiter operation range VTH input level voltage range Symbol VCC VM ILIM VTH Conditions Hall sensor input common-mode input voltage range VICM Ratings 4 to 15 3 to 15 0.6 to 1.2 0 to 6 0.2 to 3 Unit V V V V V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 LB11660FV Electrical Characteristics Unless otherwise specified Ta  25C, VCC = 12V Parameter Circuit current HB voltage 6VREG voltage CT pin high-level voltage CT pin low-level voltage ICT pin charge current 1 ICT pin charge current 2 ICT pin discharge current 1 ICT pin discharge current 2 ICT charge/discharge current ratio 1 ICT charge/discharge current ratio 2 ICT charge/discharge ratio threshold voltage VTH bias current OUT output high saturation voltage PRE output low saturation voltage PRE output high saturation voltage Current limiter PWM output pin high-level voltage PWM output pin low-level voltage PWM external C charge current PWM external C discharge current PWM oscillator frequency Hall sensor input sensitivity FG output pin low-level voltage FG output pin leakage current Thermal protection circuit Symbol ICC1 VHB V6VREG VCTH VCTL ICTC1 ICTC2 ICTD1 ICTD2 RCT1 RCT2 VRCT Conditions Drive mode IHB = 5mA 6VREG = 5mA VCC = 12V VCC = 6V VCC = 12V VCC = 6V VCC = 12V VCC = 6V IBVTH VOH VPL VPH VRf VPWMH IO = 200mA, RL = 1 IO = 5mA IO = 20mA VCC  VM VPWML IPWM1 IPWM2 FPWM VHN VFG/RD IFGL/IRDL THD C = 200pF Zero peak value (including offset and hysteresis) IFG/RD = 5mA VFG/RD = 7V Design target value*3 min 1.05 5.80 3.4 1.4 1.7 1.3 0.11 0.34 12 3 6 2 450 2.2 0.4 23 18 19 150 Ratings typ 9 1.25 6 3.6 1.6 2.2 1.8 0.15 0.44 15 4 6.6 1 0.6 0.2 0.9 500 2.5 0.5 18 24 23 15 0.2 180 max 12 1.40 6.20 3.8 1.8 2.7 2.3 0.19 0.54 18 5 7.3 0 0.8 0.4 1.2 550 2.8 0.7 14 30 27 25 0.3 30 210 Unit mA V V V V A A A A Times Times V A V V V mV V V A A kHz mV V A C *3: This is a design guarantee and is not tested in individual units. The thermal protection circuit is included to prevent any thermal damage to the IC. Since this would imply operation outside the IC's guarantee.


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