Features
For general purpose applications The LL103A, B, C series is a metal-on-silicon Schottky barrier device which is...
Features
For general purpose applications The LL103A, B, C series is a metal-on-silicon
Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. These diodes are also available in the DO-35 case with type designations SD103A thru SD103C.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green
LL103A thru LL103C
Small-Signal Diode
Schottky Diodes
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Peak inverse voltage
LL103A LL103B LL103C
Power dissipation (Infinite heatsink) TC=3/8" from body derates at 4mW/oC to 0 at 125oC
Single cycle surge 60-Hz sine wave
Junction temperature
Storage temperature range
V RRM
Ptot IFSM Tj TS
40 30 20 400 (1)
15
125
-55 to +150
Unit
Volts
mW Amps
oC oC
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Leakage current Forward voltage drop
LL103A LL103B LL103C
IR VF
VR=30V VR=20V VR=10V
IF=20mA IF=200mA
Junction capacitance
Ctot VR=0V, f=1MHz
Reverse recovery time
trr
IF=IR=50mA to 200mA, recover to 0.1IR...