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MJD13003

ON Semiconductor

NPN SILICON POWER TRANSISTOR

MJD13003 High Voltage SWITCHMODET Series DPAK For Surface Mount Applications This device is designed for high−voltage,...


ON Semiconductor

MJD13003

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MJD13003 High Voltage SWITCHMODET Series DPAK For Surface Mount Applications This device is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as http://onsemi.com switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) NPN SILICON POWER TRANSISTOR 1.5 AMPERES Straight Lead Version in Plastic Sleeves (“−1” Suffix) 400 VOLTS, 15 WATTS Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Reverse Biased SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1.0 A, 100_C is 290 ns (Typ) CASE 369A−13 700 V Blocking Capability Switching and SOA Applications Information Electrically Similar to the Popular MJE13003 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous — Peak (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C (2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎ...




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