BFL4007

Ordering number : ENA1689A BFL4007 N-Channel Power MOSFET 600V, 14A, 0.68Ω, TO-220F-3FS http://onsemi.com Features Reverse recovery time trr=95ns (typ.) Input capacitance Ciss=1200pF (typ.) ON-resistance RDS(on)=0.52Ω (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 14 A 8.7 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 49 A Source to Drain Diode Forward Current (DC) IS 14 A Source to Drain Diode Forward Current (Pulse) ISP PW≤10μs, duty cycle≤1% 49 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.0 W 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 196 mJ Avalanche Current *5 IAV 8.5 A Note :*1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=8.5A (Fig.1) *5 L≤5mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended expos...