CEH2321A
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -4.8A, RDS(ON) = 55mΩ @VGS = ...
CEH2321A
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
TSOP-6 package.
4 5 6
3 2 1 TSOP-6
G(3)
D(1,2,5,6,) S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID -4.8 IDM -19.2
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units V V A A W C
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice
1
Rev 3. 2014.Feb http://www.cetsemi.com
CEH2321A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V
-20
-1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d
VGS(th) RDS(on)
VGS = VDS, ID = -250µA VGS = -4.5V,...
