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CEP04N65 Dataheets PDF



Part Number CEP04N65
Manufacturers CET
Logo CET
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEP04N65 DatasheetCEP04N65 Datasheet (PDF)

CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RDS(ON) 2.8Ω ID 4A @VGS 10V 650V 2.8Ω 4A 10V 650V 2.8Ω 4A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltag.

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CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RDS(ON) 2.8Ω ID 4A @VGS 10V 650V 2.8Ω 4A 10V 650V 2.8Ω 4A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 650 VGS ±30 ID 4 2.4 IDM e 16 104 PD 0.83 TO-220F 4d 2.4 d 16 d 35 0.28 Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g Operating and Store Temperature Range EAS IAS TJ,Tstg 220 4.2 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.2 62.5 3.6 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Oct http://www.cetsemi.com CEP04N65/CEB04N65 CEF04N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 650 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 2A 2 4 2.3 2.8 V Ω Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss VDS = 25V, VGS = 0V, f = 1.0 MHz 610 75 pF pF Crss 15 pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID = 4A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 480V, ID = 4A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings 18 18 33 16 12 3 5 ns ns ns ns nC nC nC Drain-Source Diode Forward Current IS f Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 4A 4A 1.2 V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 2.2A . g.L = 25mH, IAS =4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 ID, Drain Current (A) C, Capacitance (pF) CEP04N65/CEB04N65 CEF04N.


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