Document
CEP04N65/CEB04N65
CEF04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP04N65 CEB04N65 CEF04N65
VDSS 650V
RDS(ON) 2.8Ω
ID 4A
@VGS 10V
650V 2.8Ω
4A
10V
650V 2.8Ω 4A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS 650
VGS ±30
ID
4 2.4
IDM e
16
104 PD 0.83
TO-220F
4d 2.4 d 16 d 35 0.28
Single Pulsed Avalanche Energy g
Single Pulsed Avalanche Current g Operating and Store Temperature Range
EAS IAS TJ,Tstg
220 4.2 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.2 62.5
3.6 65
Units
V V A A A W W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2012.Oct http://www.cetsemi.com
CEP04N65/CEB04N65 CEF04N65
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
650
1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 2A
2
4 2.3 2.8
V Ω
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss
VDS = 25V, VGS = 0V, f = 1.0 MHz
610 75
pF pF
Crss 15 pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 300V, ID = 4A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 480V, ID = 4A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
18 18 33 16 12 3 5
ns ns ns ns nC nC nC
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 4A
4A 1.2 V
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 2.2A . g.L = 25mH, IAS =4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP04N65/CEB04N65 CEF04N.