CEP14N5

CEP14N5/CEB14N5 CEF14N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP14N5 CEB14N5 CEF14N5 VDSS 500V 500V 500V RDS(ON) 0.38Ω 0.38Ω 0.38Ω ID 14A 14A 14A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 500 ±30 14 8.6 56 178 1.4 14 d 8.6 d 56 d 62 0.5 Single Pulsed Avalanche Energy e EAS 504 Single Pulsed Avalanche Current e IAS 12 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.7 62.5 2 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.Dec. http://www.cetsemi.com CEP14N5/CEB14N5 CEF14N5 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curren...