CEP14N5/CEB14N5
CEF14N5
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP14N5 CEB14N...
CEP14N5/CEB14N5
CEF14N5
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP14N5 CEB14N5 CEF14N5
VDSS 500V 500V
500V
RDS(ON) 0.38Ω 0.38Ω
0.38Ω
ID 14A 14A 14A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM e
PD
500
±30
14 8.6 56 178 1.4
14 d 8.6 d 56 d 62 0.5
Single Pulsed Avalanche Energy e
EAS 504
Single Pulsed Avalanche Current e
IAS 12
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.7 62.5
2 65
Units
V V A A A W W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2011.Dec. http://www.cetsemi.com
CEP14N5/CEB14N5 CEF14N5
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curren...