CEP18N5

CEP18N5/CEB18N5 CEF18N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP18N5 CEB18N5 CEF18N5 VDSS 500V 500V 500V RDS(ON) 0.27Ω 0.27Ω 0.27Ω ID 18A 18A 18A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 500 ±30 18 11 72 219 1.8 18 d 11 d 72 d 74 0.6 Single Pulsed Avalanche Energy e EAS 859 Single Pulsed Avalanche Current e IAS 18 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.57 62.5 1.7 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2013.Jan. http://www.cetsemi.com CEP18N5/CEB18N5 CEF18N5 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curre...