CEP20A03/CEB20A03
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 197A, RDS(ON) = 2 mΩ ...
CEP20A03/CEB20A03
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID
IDM PD
30
±20
197 124 788 139
1.1
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
800 40 -55 to 150
Units V V A A A W
W/ C
mJ A
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Limit 0.9 62.5
Units C/W C/W
Rev 1. 2012.Jun http://www.cetsemi.com
CEP20A03/CEB20A03
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR...