CEP30N3/CEB30N3
CEF30N3
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP30N3 CEB30N...
CEP30N3/CEB30N3
CEF30N3
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP30N3 CEB30N3 CEF30N3
VDSS 300V 300V
300V
RDS(ON) 110mΩ 110mΩ
110mΩ
ID 30A 30A 30A e
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
TO-220F
VDS 300
VGS ±30
ID 30 30 e
IDM f
120 120 e
227 74 PD 1.8 0.6
EAS IAS TJ,Tstg
450 30 -55 to 150
Units
V V A A W W/ C mJ A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.55 62.5
1.7 65
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2012.Dec http://www.cetsemi.com
CEP30N3/CEB30N3 CEF30N3
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Curre...