CEF30N3

CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V RDS(ON) 110mΩ 110mΩ 110mΩ ID 30A 30A 30A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 300 VGS ±30 ID 30 30 e IDM f 120 120 e 227 74 PD 1.8 0.6 EAS IAS TJ,Tstg 450 30 -55 to 150 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.55 62.5 1.7 65 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Dec http://www.cetsemi.com CEP30N3/CEB30N3 CEF30N3 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Curre...