N-Channel Power MOSFET
Ordering number : ENA1184A
ECH8663R
N-Channel Power MOSFET
30V, 8A, 20.5mΩ, Dual ECH8
http://onsemi.com
Features
• Lo...
Description
Ordering number : ENA1184A
ECH8663R
N-Channel Power MOSFET
30V, 8A, 20.5mΩ, Dual ECH8
http://onsemi.com
Features
Low ON-resistance 2.5V drive Common-drain type Protection diode in
Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD PT Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm)
Ratings 30
±12 8
60 1.4 1.5 150 --55 to +150
Unit V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-003
Top View 2.9
85
ECH8663R-TL-H
0.15 0 to 0.02
Product & Package Information
Package
: ECH8
JEITA, JEDEC
:-
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TJ
TL LOT No.
2.8 0.9 0.25 2.3 0.25
1 0.65
4 0.3
Bottom View
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain
ECH8
Electrical Connection
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