DatasheetsPDF.com

ECH8664R Dataheets PDF



Part Number ECH8664R
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet ECH8664R DatasheetECH8664R Datasheet (PDF)

Ordering number : ENA1185A ECH8664R N-Channel Power MOSFET 30V, 7A, 23.5mΩ, Dual ECH8 http://onsemi.com Features • Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power D.

  ECH8664R   ECH8664R



Document
Ordering number : ENA1185A ECH8664R N-Channel Power MOSFET 30V, 7A, 23.5mΩ, Dual ECH8 http://onsemi.com Features • Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±12 7 60 1.3 1.4 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-003 Top View 2.9 85 ECH8664R-TL-H 0.15 0 to 0.02 Product & Package Information • Package : ECH8 • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TK TL LOT No. 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 Electrical Connection 8765 1234 0.07 Semiconductor Components Industries, LLC, 2013 July, 2013 62712 TKIM/72308PE TIIM TC-00001451 No. A1185-1/7 ECH8664R Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=4.5V ID=3.5A, VGS=4.0V ID=2A, VGS=3.1V ID=2A, VGS=2.5V See specified Test Circuit. VDS=10V, VGS=4.5V, ID=7A IS=7A, VGS=0V Switching Time Test Circuit VIN 4V 0V VIN PW=10μs D.C.≤1% G VDD=15V ID=3.5A RL=4.3Ω D VOUT Rg ECH8664R P.G 50Ω S Rg=1kΩ Ordering Information Device ECH8664R-TL-H Package ECH8 Shipping 3,000pcs./reel min 30 Ratings typ 0.5 4.5 12.5 13 14.5 14.5 7.5 18 19 21 24 270 850 3300 1700 10 2.1 2.0 0.75 max 1 ±10 1.3 23.5 25 27.3 34 1.2 Unit V μA μA V S mΩ mΩ mΩ mΩ ns ns ns ns nC nC nC V memo Pb Free and Halogen Free No. A1185-2/7 ECH8664R Drain Current, ID -- A 10.0V 4.5V 4.0V 3.1V 2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID -- VDS 10 9 8 7 6 5 4 VGS=1.5V 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 Drain-to-Source Voltage, VDS -- V IT13807 RDS(on) -- VGS 50 Ta=25°C 45 ID=2.0A 40 3.5A 35 30 25 20 15 10 5 02468 Gate-to-Source | yfs V| ol-t-ageI,DVGS -- V 3 VDS=10V 2 10 IT13618 10 7 5 Ta= --25°C 75°C 3 25°C 2 1.0 7 5 0.1 7 5 3 2 23 5 7 1.0 23 Drain Current, ID -- A SW Time -- ID 5 7 10 IT13620 td(off) VDD=10V VGS=4.5V tf 1000 7 5 3 2 tr td(on) 100 0.01 23 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 23 5 7 10 IT13684 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Ta=75°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A ID -- VGS 10 VDS=10V 9 8 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V IT13617 RDS(on) -- Ta 50 Ta=75°C 25°C --25°C 45 40 35 30 V GS=3.1V, I D=2.0A 25 20 VGS=2.5V, ID=2.0A VGS=4.5V, ID=3.5A 15 10 VGS=4.0V, ID=3.5A 5 -60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 10 7 5 VGS=0V IS -- VSD 3 2 140 160 IT13619 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage, VSD -- V VGS -- Qg 4.5 VDS=10V 4.0 ID=7A 0.9 1.0 IT13621 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC IT13685 No. A1185-3/7 Forward Transfer Admittance, | yfs | -- S Switching Time, SW Time -- ns Drain Current, ID -- A Allowable Power Dissipation, PD -- W ECH8664R ASO 2 100 7 IDP=60A PW≤10μs 5 3 2 10 7 ID=7A 5 3 2 1.0 7 5 Operation in this 1ms 100μs DC 1001m0sms operation 3 2 area is limited by RDS(on). 0.1 7 5 3 2 0.01 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 23 5 IT13808 PD -- Ta 1.6 When mounted on ceramic substrate (900mm2×0.8mm) 1.4 1.3 1.2 1.0 0.8 To1tuanliDt issipation 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13799 No. A1185-4/7 Embossed Taping Specification ECH8664R-TL-H ECH.


ECH8663R ECH8664R ECH8697R


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)