Document
Ordering number : ENA1185A
ECH8664R
N-Channel Power MOSFET
30V, 7A, 23.5mΩ, Dual ECH8
http://onsemi.com
Features
• Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in
• Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD PT Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm)
Ratings 30
±12 7
60 1.3 1.4 150 --55 to +150
Unit V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-003
Top View 2.9
85
ECH8664R-TL-H
0.15 0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TK
TL LOT No.
2.8 0.9 0.25 2.3 0.25
1 0.65
4 0.3
Bottom View
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain
ECH8
Electrical Connection
8765
1234
0.07
Semiconductor Components Industries, LLC, 2013 July, 2013
62712 TKIM/72308PE TIIM TC-00001451 No. A1185-1/7
ECH8664R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 td(on) tr td(off) tf Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=4.5V ID=3.5A, VGS=4.0V ID=2A, VGS=3.1V ID=2A, VGS=2.5V
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=7A
IS=7A, VGS=0V
Switching Time Test Circuit
VIN 4V 0V
VIN
PW=10μs D.C.≤1%
G
VDD=15V
ID=3.5A RL=4.3Ω D VOUT
Rg
ECH8664R P.G 50Ω S
Rg=1kΩ
Ordering Information
Device ECH8664R-TL-H
Package ECH8
Shipping 3,000pcs./reel
min 30
Ratings typ
0.5 4.5 12.5 13 14.5 14.5
7.5 18 19 21 24 270 850 3300 1700 10 2.1 2.0 0.75
max 1
±10 1.3 23.5 25 27.3 34
1.2
Unit
V μA μA V S
mΩ mΩ mΩ mΩ ns ns ns ns nC nC nC V
memo Pb Free and Halogen Free
No. A1185-2/7
ECH8664R
Drain Current, ID -- A 10.0V 4.5V 4.0V 3.1V 2.5V
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
ID -- VDS
10
9
8
7
6
5
4 VGS=1.5V
3
2
1
0 0 0.1 0.2 0.3 0.4 0.5
Drain-to-Source Voltage, VDS -- V IT13807
RDS(on) -- VGS
50
Ta=25°C
45
ID=2.0A
40
3.5A
35
30
25
20
15
10
5 02468
Gate-to-Source
| yfs
V| ol-t-ageI,DVGS
--
V
3
VDS=10V
2
10 IT13618
10
7 5
Ta= --25°C 75°C
3 25°C
2
1.0 7 5 0.1
7 5
3 2
23
5 7 1.0
23
Drain Current, ID -- A
SW Time -- ID
5 7 10 IT13620
td(off)
VDD=10V VGS=4.5V
tf
1000 7 5
3 2
tr td(on)
100 0.01
23
5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
23
5 7 10 IT13684
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A Ta=75°C 25°C --25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
ID -- VGS
10
VDS=10V
9
8
7
6
5
4
3
2
1 0
0 0.5 1.0 1.5 2.0 2.5
Gate-to-Source Voltage, VGS -- V IT13617
RDS(on) -- Ta
50
Ta=75°C 25°C --25°C
45
40 35 30
V GS=3.1V, I D=2.0A
25 20
VGS=2.5V, ID=2.0A
VGS=4.5V, ID=3.5A
15 10
VGS=4.0V, ID=3.5A
5 -60 --40 --20 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
10
7 5
VGS=0V
IS -- VSD
3 2
140 160 IT13619
1.0 7 5
3 2
0.1 7 5
3 2
0.01 7 5
3 2
0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Diode Forward Voltage, VSD -- V
VGS -- Qg
4.5
VDS=10V 4.0 ID=7A
0.9 1.0 IT13621
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT13685
No. A1185-3/7
Forward Transfer Admittance, | yfs | -- S
Switching Time, SW Time -- ns
Drain Current, ID -- A Allowable Power Dissipation, PD -- W
ECH8664R
ASO
2
100 7
IDP=60A
PW≤10μs
5
3 2
10 7
ID=7A
5
3 2
1.0 7
5 Operation in this
1ms 100μs
DC
1001m0sms operation
3 2
area is limited by RDS(on).
0.1
7 5 3 2
0.01
Ta=25°C Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
23 5 IT13808
PD -- Ta
1.6
When mounted on ceramic substrate (900mm2×0.8mm)
1.4 1.3 1.2
1.0 0.8
To1tuanliDt issipation
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13799
No. A1185-4/7
Embossed Taping Specification ECH8664R-TL-H
ECH.