NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE0224DA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0224D...
Description
http://www.ncepower.com
Pb Free Product
NCE0224DA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0224DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V
(Typ:62mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0224DA
NCE0224DA
TO-263-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range
ID (100℃)
IDM PD
EAS
TJ,TSTG
Limit
200 ±20
24
17 100 150 250 -55 To 175
Unit
V V A
A A W mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Pb Free Product
NCE0224DA
Thermal...
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