NCE1520

http://www.ncepower.com Pb Free Product NCE1520 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V (Typ:70mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Boost converters ● LED backlighting ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE1520 NCE1520 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous ID (100℃) Drain Current-Continuous(TC=100℃) IDM Pulsed Drain Current PD Maximum Power Dissipation Derating factor EAS Single pulse avalanche energy (Note 5) TJ,TSTG Operating Junction and Storage Temperature Range Limit 150 ±20 20 14 40 75 0.5 200 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE1520 Thermal Characteristic RθJC Thermal Resistance, Junction-to-Case (Note 2) 2.0 ℃/W Electrical...