NCE3404Y

http://www.ncepower.com Pb Free Product NCE3404Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3404Y uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 5.8A RDS(ON) < 28mΩ @ VGS=10V RDS(ON) < 40mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram Application ●Load switch ●PWM application Marking and pin assignment SOT-23-3L top view Package Marking and Ordering Information Device Marking Device Device Package 3404Y NCE3404Y SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 5.8 20 1.4 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=30V,VGS=0V 89 ℃/W Min Typ Max Unit 30 33 -- 1 V μA Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.co...