NCE5520Q

http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE5520Q General Features ● VDS =55V,ID =20A RDS(ON) < 22mΩ @ VGS=10V (Typ:19mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Application ● Industrial power supplies ● LED backlighting Schematic diagram Pin assignment DFN3X3 EP top view Package Marking and Ordering Information Device Marking Device Device Package NCE5520Q NCE5520Q DFN3X3EP Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Operating Junction and Storage Temperature Range TJ,TSTG Limit 55 ±20 20 14 60 35 0.23 -55 To 150 Unit V V A A A W W/℃ ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 3.6 ℃/W Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE5520Q Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakag...