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TF410 Dataheets PDF



Part Number TF410
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel JFET
Datasheet TF410 DatasheetTF410 Datasheet (PDF)

Ordering number : ENA2007A TF410 N-Channel JFET 40V, 50 to 130μA, 0.11mS, USFP http://onsemi.com Applications • Impedance conversion, infrared sensor applications Features • Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gat.

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Ordering number : ENA2007A TF410 N-Channel JFET 40V, 50 to 130μA, 0.11mS, USFP http://onsemi.com Applications • Impedance conversion, infrared sensor applications Features • Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. Package Dimensions unit : mm (typ) 7055-003 0.6 0.2 3 TF410-TL-H 0.11 0 to 0.02 0.8 0.1 1.0 0.1 1 0.175 2 0.15 0.27 0.05 1 2 1 : Source 2 : Drain 3 : Gate 3 USFP 0.05 Product & Package Information • Package : USFP • JEITA, JEDEC :- • Minimum Packing Quantity : 10,000 pcs./reel Packing Type: TL Marking 3 BTL Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view 12 Semiconductor Components Industries, LLC, 2013 August, 2013 53012 TKIM/22912GB TKIM TC-00002703 No. A2007-1/6 TF410 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss IG=--10μA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1μA VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz Ordering Information Device TF410-TL-H Package USFP Shipping 10,000pcs./reel min --40 Ratings typ 50 0.05 --1.4 0.11 0.7 0.3 max --500 --4.0 130 Unit V pA V μA mS pF pF memo Pb Free and Halogen Free Drain Current, ID -- μA ID -- VDS 120 100 VGS=0V 80 --0.2V 60 --0.4V 40 --0.6V 20 --0.8V --1.0V 0 01234 120 Drain-to-SIoDurce--VoVltaGgeS, VDS -- V VDS=10V 5 IT16761 100 80 60 40 20 0 --2.0 75°C --1.5 --1.0 --0.5 Gate-to-Source Voltage, VGS -- V 0 IT16764 Ta= --25°C 25°C Cutoff Voltage, VGS(off) -- V Drain Current, ID -- μA 120 100 80 60 40 20 0 0 --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 40 ID -- VDS VGS=0V --0.2V --0.4V --0.6V --0.8V --1.0V 5 10 15 20 25 30 Drain-VtoG-SSou(orcfef)Vo-l-tagIeD, VSDSS -- V IT16762 VDS=10V ID=1.0μA 60 80 100 120 Drain Current, IDSS -- μA 140 IT16765 No. A2007-2/6 Drain Current, ID -- μA Forward Transfer Admittance, | yfs | -- mS TF410 0.14 VDS=10V 0.13 VGS=0V f=1kHz 0.12 | yfs | -- IDSS 0.11 0.10 0.09 0.08 0.07 0.06 40 1.0 7 60 80 100 120 140 Drain Current, Crss -- IDVSDSS-- μA IT16766 VGS=0V f=1MHz 5 3 2 Input Capacitance, Ciss -- pF 1.0 Ciss -- VDS VGS=0V f=1MHz 7 5 3 2 0.1 0.1 35 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source PD Voltage, -- Ta VDS -- V 5 7 100 IT16767 30 25 20 15 10 Allowable Power Dissipation, PD -- mW 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V IT16768 5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16778 Reverse Transfer Capacitance, Crss -- pF No. A2007-3/6 Taping Specification TF410-TL-H TF410 No. A2007-4/6 Outline Drawing TF410-TL-H TF410 Land Pattern Example Mass (g) Unit (0.0005) mm 0.3 Unit: mm 0.95 0.25 0.2 0.2 No. A2007-5/6 TF410 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into th.


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