Document
Ordering number : ENA2007A
TF410
N-Channel JFET
40V, 50 to 130μA, 0.11mS, USFP
http://onsemi.com
Applications
• Impedance conversion, infrared sensor applications
Features
• Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature
VDSS VGDS IG ID PD Tj
Storage Temperature
Tstg
Conditions
Ratings 40
--40 10 1 30
150 --55 to +150
Unit V V mA mA
mW °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
LOT No. LOT No.
Package Dimensions unit : mm (typ) 7055-003
0.6
0.2 3
TF410-TL-H
0.11
0 to 0.02
0.8 0.1
1.0
0.1
1 0.175
2 0.15
0.27 0.05
1 2 1 : Source 2 : Drain 3 : Gate
3 USFP
0.05
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
BTL
Electrical Connection
3
1 : Source 2 : Drain 3 : Gate
1 2 Top view
12
Semiconductor Components Industries, LLC, 2013 August, 2013
53012 TKIM/22912GB TKIM TC-00002703 No. A2007-1/6
TF410
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance
V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss
Crss
IG=--10μA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1μA VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
Ordering Information
Device TF410-TL-H
Package USFP
Shipping 10,000pcs./reel
min --40
Ratings typ
50 0.05
--1.4
0.11 0.7 0.3
max
--500 --4.0 130
Unit
V pA V μA mS pF pF
memo Pb Free and Halogen Free
Drain Current, ID -- μA
ID -- VDS
120
100
VGS=0V
80
--0.2V
60
--0.4V
40
--0.6V
20 --0.8V --1.0V
0 01234
120 Drain-to-SIoDurce--VoVltaGgeS, VDS -- V
VDS=10V
5 IT16761
100
80
60
40 20
0 --2.0
75°C
--1.5
--1.0
--0.5
Gate-to-Source Voltage, VGS -- V
0 IT16764
Ta= --25°C 25°C Cutoff Voltage, VGS(off) -- V
Drain Current, ID -- μA
120
100
80
60
40
20 0 0
--2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4
40
ID -- VDS
VGS=0V
--0.2V
--0.4V
--0.6V --0.8V --1.0V
5 10 15 20 25 30
Drain-VtoG-SSou(orcfef)Vo-l-tagIeD, VSDSS -- V IT16762
VDS=10V ID=1.0μA
60 80 100 120
Drain Current, IDSS -- μA
140 IT16765
No. A2007-2/6
Drain Current, ID -- μA
Forward Transfer Admittance, | yfs | -- mS
TF410
0.14
VDS=10V 0.13 VGS=0V
f=1kHz
0.12
| yfs | -- IDSS
0.11
0.10
0.09
0.08
0.07 0.06
40
1.0 7
60 80 100 120 140
Drain Current,
Crss --
IDVSDSS--
μA
IT16766
VGS=0V f=1MHz
5
3 2
Input Capacitance, Ciss -- pF
1.0 Ciss -- VDS
VGS=0V f=1MHz
7 5
3
2
0.1 0.1
35
2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source
PD
Voltage,
-- Ta
VDS
--
V
5 7 100 IT16767
30
25
20
15
10
Allowable Power Dissipation, PD -- mW
0.1 0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT16768
5
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT16778
Reverse Transfer Capacitance, Crss -- pF
No. A2007-3/6
Taping Specification TF410-TL-H
TF410
No. A2007-4/6
Outline Drawing TF410-TL-H
TF410
Land Pattern Example
Mass (g) Unit (0.0005) mm
0.3
Unit: mm
0.95 0.25
0.2 0.2
No. A2007-5/6
TF410
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into th.