2SC3505. C3505 Datasheet

C3505 2SC3505. Datasheet pdf. Equivalent


Part C3505
Description 2SC3505
Feature SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC3.
Manufacture SavantIC
Datasheet
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SavantIC Semiconductor Silicon NPN Power Transistors www.Dat C3505 Datasheet
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C3505
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3505
DESCRIPTION
·With TO-3PN package
·High voltage ,high reliability
·High speed switching
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to case
VALUE
900
700
10
6
3
80
150
-55~150
UNIT
V
V
V
A
A
W
MAX
1.5
UNIT
/W



C3505
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3505
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
ICBO Collector cut-off current
VCB=900V; IE=0
IEBO Emitter cut-off current
VEB=10V; IC=0
hFE DC current gain
IC=2A ; VCE=5V
Switching times
700 V
900 V
0.5 V
1.2 V
1.0 mA
1.0 mA
10
ton Turn-on time
tstg Storage time
tf Fall time
IC=3A;IB1=0.6A;IB2=-1.2A
RL=100D,PW=20µs
DutyE2%
1.0 µs
5.0 µs
1.0 µs
2







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