UNISONIC TECHNOLOGIES CO., LTD
MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE FAST-SWITCHING NPN POWER ...
UNISONIC TECHNOLOGIES CO., LTD
MJE13003D-P
Preliminary
NPN SILICON
TRANSISTOR
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
DESCRIPTION
The UTC MJE13003D-P is a
NPN Power
Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.
FEATURES
* Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode
INTERNAL SCHEMATIC DIAGRAM
C (2)
B (1)
E (3)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B
TO-92
MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K
TO-92
Note: Pin Assignment: C: Collector
B: Base E: Emitter
Pin Assignment 123 ECB ECB
Packing
Tape Box Bulk
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R201-085.d
MJE13003D-P
MARKING
Preliminary
NPN SILICON
TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R201-085.d
MJE13003D-P
Preliminary
NPN SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Emitter Voltage (VBE =0)
VCES
700
V
Collector-Emitter Voltage (IB =0) VCEO 400 V
Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS)
VEBO
9
V
Collector Current
IC 1.5 A
Collector Peak Current (tP<5ms)
ICM
3A
Base Current
IB 0.75 A
Base Peak Current (tP<5ms)
IBM 1.5 A
Power Dissipation
TA=25°C TC=25°C
PD
1...