MJE13009-K

UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS  DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.  FEATURES * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8 A, 100°C is 120 ns (Typ.) * 700 V Blocking Capability * SOA and Switching Applications Information  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13009L-K-TA3-T MJE13009G-K-TA3-T MJE13009L-K-T3P-T MJE13009G-K-T3P-T Note: Pin Assignment: E: Emitter C: Collector Package TO-220 TO-3P B: Base Pin Assignment 123 BCE BCE Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 9 QW-R223-007.B MJE13009-K NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage (VBE=-1.5V) VCEV 700 V Emitter Base Voltage VEBO 9 V Collector Current Continuous Peak (Note 3) IC ICM 12 24 A Base Current Continuous Peak (Note 3) IB IBM 6 12 A Emitter Current Continuous Peak (Note 3) IE IEM 18 36 A Power Dissipation Derate above 25°C TO-220...