MMDT5401

UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMDT5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.  FEATURES * High Collector-Emitter Voltage: VCEO = -150V * High current gain  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number MMDT5401G-AL6-R Package SOT-363 Pin Assignment 123456 E1 B1 C2 E2 B2 C1 Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-021.c MMDT5401 Preliminary DUAL TRANSISTOR  ABSOLUATE MAXIUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -160 V Collector -Emitter Voltage VCEO -150 V Emitter -Base Voltage VEBO -5 V DC Collector Current IC -600 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage VCBO IC=-100A, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=-1mA, IB=0 Emitter-Base Breakdown Voltage VEBO IE=-10A, IC=0 Collecto...