MMDT5551

UNISONIC TECHNOLOGIES CO., LTD MMDT5551 DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.  FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number MMDT5551G-AL6-R Package SOT-363 Pin Assignment 123456 E1 B1 C2 E2 B2 C1 Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-022.C MMDT5551 DUAL TRANSISTOR  ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO 180 V Collector -Emitter Voltage VCEO 160 V Emitter -Base Voltage VEBO 6 V DC Collector Current IC 600 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage VCBO IC=100A, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage VEBO IE=10A, IC=0 Collector Cut-off Current ICBO VCB=120V, ...