SL1001

TECHNICAL DATA Audio Frequency Power Amplifier Features ● Low Speed Switching SOT-223 SL1001 Emitter Collector Base 123 SL1001 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Tc=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -3 A ICP *Collector Current (Pulse) -7 A IB Base Current (DC) - 0.6 A PC Collector Dissipation (TC=25°C) 10 W Rθja Junction to Ambient 132 °C/W Rθjc Junction to Case 13.5 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Electrical Characteristics Tc=25°C unless otherwise noted Characteristics DC Current Gain (1), (2) DC Current Gain (1), (2) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) Symbol hFE hFE Icbo Icbo Iebo Iebo Vce (sat) Vbe (sat) Unit μA μA μA μA Measurement Mode Vce =2V, Ic =20mA Vce = 2V, Ic =...