UNISONIC TECHNOLOGIES CO., LTD
STD888
PNP EPITAXIAL SILICON TRANSISTOR
HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PN...
UNISONIC TECHNOLOGIES CO., LTD
STD888
PNP EPITAXIAL SILICON
TRANSISTOR
HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE
PNP TRANSISTOR
DESCRIPTION
The UTC STD888 is a high current, high performance, low voltage
PNP transistor; it uses UTC’s advanced technology to provide customers high DC current gain and very low saturation voltage.
The UTC STD888 is suitable for switching
regulator in battery charger applications, heavy load driver and voltage regulation in bias supply circuits, etc.
FEATURES
* Very low collector to emitter saturation voltage * High DC current gain
EQUIVALENT CIRCUIT
C
B
E
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
STD888L-TN3-R
STD888G-TN3-R
Package TO-252
Pin Assignment 123 BCE
Packing Tape Reel
www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 4
QW-R209-028.B
STD888
MARKING
PNP EPITAXIAL SILICON
TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-028.B
STD888
PNP EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE=0)
VCBO -60 V
Collector-Emitter Voltage (IB=0)
VCEO
-30
V
Emitter-Base Voltage (IC=0)
VEBO -6 V
Collector Current
IC -5 A
Collector Peak Current (tp<5ms)
ICM
-10 A
Total Dissipation at TC=25°C
PD 15 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damag...