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LE25W81QE

ON Semiconductor

8M-bit (1024K x 8) Serial Flash Memory

LE25W81QE Advance Information CMOS LSI 8M-bit (1024K x 8) Serial Flash Memory www.onsemi.com Overview The LE25W81QE i...


ON Semiconductor

LE25W81QE

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Description
LE25W81QE Advance Information CMOS LSI 8M-bit (1024K x 8) Serial Flash Memory www.onsemi.com Overview The LE25W81QE is a serial interface-compatible flash memory device with a 1M  8-bit configuration. It uses a single 2.6V power supply for both reading and writing (program and erase functions) and does not require a special power supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to the size of the memory area in which the data is to be erased at one time: the small sector (4K bytes) erase function, the sector (64K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can be efficiently utilized by selecting one of these functions depending on the application. A page program method is supported for data writing. The page program method of LE25W81QE can program any amount of data from 1 to VDFN8 5x6, 1.27P / VSON8T (6x5) 256 bytes. This IC incorporates ON Semi’s unique high-speed programming function which enables fast 0.3ms (typ.) page program time. The program time of 1.5s (typ.) when programming 8-Mbit full-memory space makes for fast data writing when the chip erase function is used. While making the most of the features inherent to a serial flash memory device, the LE25W81QE is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25W81QE has maximally eliminated this speed-...




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