ME4411

P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4411/ME4411-G FEATURES ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦13mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter Ordering Information: ME4411 (Pb-free) ME4411-G (Green product-Halogen free ) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous DrainCurrent* Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Avalanche Energy with Single Pulse(L=0.1mH) Maximum Power Dissipation* TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS VGS ID IDM IAR EAS PD TJ RθJA Maximum Ratings -30 ±20 -12.5 -10 -50 -42 ...