2SB1017

UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. „ FEATURES * Low base drive „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1017L-x-TF3-T 2SB1017G-x-TF3-T Package TO-220F Pin Assignment 123 BCE Packing Tube 2SB1017L-x-TF3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Free (1) T: Tube (2) TF3: TO-220F (3) x: refer to Classification of hFE (4) Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 2 QW-R219-010.a 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -4 A Base Current IB -0.4 A Collector Dissipation (TC=25°C) PC 25 W Junction Temperature TJ 150 °C Storage Temperature TST -55 ~ 150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain ...