1SR159-200

1SR159-200 Diodes Rectifier diode 1SR159-200 !Applications High frequency rectification. For switching power supply. !External dimensions (Units: mm) 1.5±0.2 CATHODE MARK !Features 1) Small surface mounting type. (PMDS) 2) Low VF. (VF=0.90V Typ. at 1A) 3) High speed. (trr=23ns Typ.) 4.5±0.2 1.2±0.3 6 3 3 4 0.1 +0.02 −0.1 2.0±0.2 2.6±0.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 1 2 Date code EX. 1999.1→9.1 !Absolute maximum ratings (Ta=25°C) Parameter Absolute peak reverse voltage Peak reverse voltage Mean rectifying current∗1 Peak forward surge current∗2 Junction temperature Storage temperature Symbol VRSM VRM IO IFSM Tj Tstg Limits 200 200 1 20 150 −55∼+150 Unit V V A A ˚C ˚C ∗1 When mounted on an alumina PCB board ∗2 60 Hz for 1 !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. − − − Typ. − − − Max. 0.98 10 50 Unit V µA ns IF=1.0A VR=200V IF =IR =100mA Conditions 5.0±0.3 1SR159-200 Diodes !Electrical characteristic curves (Ta=25°C) 10.00 1000.0 Ta=125˚C POWER DISSIPATION : Pd (W) 1.5 0.3 0.2 1.0 D=0.05 0.1 sin 0.5 0.8 DC FORWARD CURRENT : IF (A) 1.00 REVERSE CURRENT : IR (µA) 100.0 Ta=75˚C 10.0 0.10 0.5 Tp IF IO d= Tp T 2.0 0.01 Ta=125˚C Ta=75˚C Ta=25˚C 0.00 0.0 1.0 Ta=25˚C 0.2 0.4 0.6 0.8 1.0 0.1 50 100 150 200 0 0 T 0.4 0.8 1.2 1.6 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) AVERAGE RECTIFIED FORWARD CURRENT : IO...