Document
IPG20N10S4-36A
OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI)
Product Summary VDS RDS(on),max4) ID
100 V 36 mW 20 A
PG-TDSON-8-10
Type IPG20N10S4-36A
Package PG-TDSON-8-10
Marking 4N1036
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4)
Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V2)
I D,pulse -
E AS I AS V GS
I D=10A -
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
17
80 60 15 ±20 43 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.1
page 1
2015-04-13
IPG20N10S4-36A
Parameter
Symbol
Conditions
Thermal characteristics2, 4)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 3.5 K/W - 100 - 60 -
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current4)
Gate-source leakage current4) Drain-source on-state resistance4)
V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D= 16µA
I DSS
V DS=100 V, V GS=0 V, T j=25 °C
V DS=100 V, V GS=0 V, T j=125 °C2)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=17 A
100 2.0
-
-
2.7 0.01
1 31
-V 3.5 1 µA
100 100 nA 36 mW
Rev. 1.1
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2015-04-13
IPG20N10S4-36A
Parameter
Dynamic characteristics2) Input capacitance4) Output capacitance4) Reverse transfer capacitance4) Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2, 4) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current2) one channel active Diode pulse current2) one channel active
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
min.
Values typ.
Unit max.
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0 V, V DS=25 V, f =1 MHz
V DD=50 V, V GS=10 V, I D=20 A, R G=3.5 W
-
660 990 pF 210 370 16 32 3.0 - ns 1.0 4.0 3.0 -
Q gs - 3.3 4.3 nC
Q gd V DD=80 V, I D=20 A, - 2.0 4.0
Q g V GS=0 to 10 V
- 9.4 15.0
V plateau
- 5.2 - V
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=17 A, T j=25 °C
t rr
V R=50 V, I F=I S, di F/dt =100 A/µs
- - 20 A - - 80 - 1.0 1.3 V - 50 - ns
Reverse recovery charge2, 4)
Q rr
- 80 - nC
1) Current is limited by bondwire; with an R thJC = 3.5K/W the chip is able to carry 24A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Per channel
Rev. 1.1
page 3
2015-04-13
IPG20N10S4-36A
1 Power dissipation P tot=f(T C); V GS=10V; one channel active
2 Drain current I D=f(T C); V GS=10V; one channel active
45 25
40 35 20
30
15 25
Ptot [W] ID [A]
20 10
15
10 5 5
00
0 50 100 150 200
0 50 100 150
TC [°C]
TC [°C]
3 Safe operating area I D=f(V DS); T C=25°C; D =0; one channel active parameter: t p
100
1 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
ID [A] ZthJC [K/W]
10 µs 0.5
10 100
100 µs
0.1 0.05
1 10-1
0.01
1 ms
single pulse
200
0.1 0.1
Rev. 1.1
1 10 VDS [V]
10-2
100
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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2015-04-13
IPG20N10S4-36A
5 Typ. output characteristics5) I D=f(V DS); T j=25°C parameter: V GS
80
10 V
60
6 Typ. drain-source on-state resistance5) R DS(on)=f(I D); T j=25°C parameter: V GS
90
7V
5V
5.5 V
6V
80
70
ID [A] RDS(on) [mW]
60 40 6 V
50
5.5 V
40 20
5V
30
7V 10 V
0 20
012345
0
VDS [V]
20 40 60 ID [A]
7 Typ. transfer characteristics5) I D=f(V GS); V DS=6V parameter: T j
8 Typ. drain-source on-state resistance5) R DS(on)=f(T j); I D=17A; V GS=10V
80 75
-55 °C
25 °C
65
60
175 °C
55
80
40 45
ID [A] RDS(on) [mW]
35 20
25
0 345678
VGS [V]
15 -60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.1
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2015-04-13
IPG20N10S4-36A
9 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
4
10 Typ. Capacitances5) C =f(V DS); V GS=0V; f =1MHz
104
3.5
VGS(th) [V] C [pF]
3
160µA
2.5
16µA
2
103 102
Ciss Coss
1.5
1 -60 -20 20 60 100 140 180
Tj [°C]
101 0
5 10 15 20 VDS [V]
11 Typical forward diode characteristicis5) I F=f(VSD) parameter: T j
102
12 Avalanche characteristics5) I A S= f(t AV) parameter: Tj(start)
100
Crss
25 30
IF [A] IAV [A]
101
175 °C 25 °C
10
150 °C
100 °C
25 °C
1
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
0.1 1
Rev. 1.1
page 6
10 100 tAV [µs]
1000
2015-04-13
IPG20N10S4-36A
13 Avalanche energy5) E AS=f(.