DatasheetsPDF.com

IPG20N10S4-36A Dataheets PDF



Part Number IPG20N10S4-36A
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPG20N10S4-36A DatasheetIPG20N10S4-36A Datasheet (PDF)

IPG20N10S4-36A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 100 V 36 mW 20 A PG-TDSON-8-10 Type IPG20N10S4-36A Package PG-TDSON-8-10 Marking 4N1036 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol.

  IPG20N10S4-36A   IPG20N10S4-36A


Document
IPG20N10S4-36A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 100 V 36 mW 20 A PG-TDSON-8-10 Type IPG20N10S4-36A Package PG-TDSON-8-10 Marking 4N1036 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V GS I D=10A - P tot T C=25 °C Operating and storage temperature T j, T stg - Value 20 17 80 60 15 ±20 43 -55 ... +175 Unit A mJ A V W °C Rev. 1.1 page 1 2015-04-13 IPG20N10S4-36A Parameter Symbol Conditions Thermal characteristics2, 4) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 3.5 K/W - 100 - 60 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current4) Gate-source leakage current4) Drain-source on-state resistance4) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D= 16µA I DSS V DS=100 V, V GS=0 V, T j=25 °C V DS=100 V, V GS=0 V, T j=125 °C2) I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=17 A 100 2.0 - - 2.7 0.01 1 31 -V 3.5 1 µA 100 100 nA 36 mW Rev. 1.1 page 2 2015-04-13 IPG20N10S4-36A Parameter Dynamic characteristics2) Input capacitance4) Output capacitance4) Reverse transfer capacitance4) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2, 4) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) one channel active Diode pulse current2) one channel active Diode forward voltage Reverse recovery time2) Symbol Conditions min. Values typ. Unit max. C iss C oss Crss t d(on) tr t d(off) tf V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=20 A, R G=3.5 W - 660 990 pF 210 370 16 32 3.0 - ns 1.0 4.0 3.0 - Q gs - 3.3 4.3 nC Q gd V DD=80 V, I D=20 A, - 2.0 4.0 Q g V GS=0 to 10 V - 9.4 15.0 V plateau - 5.2 - V IS I S,pulse T C=25 °C V SD V GS=0 V, I F=17 A, T j=25 °C t rr V R=50 V, I F=I S, di F/dt =100 A/µs - - 20 A - - 80 - 1.0 1.3 V - 50 - ns Reverse recovery charge2, 4) Q rr - 80 - nC 1) Current is limited by bondwire; with an R thJC = 3.5K/W the chip is able to carry 24A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Per channel Rev. 1.1 page 3 2015-04-13 IPG20N10S4-36A 1 Power dissipation P tot=f(T C); V GS=10V; one channel active 2 Drain current I D=f(T C); V GS=10V; one channel active 45 25 40 35 20 30 15 25 Ptot [W] ID [A] 20 10 15 10 5 5 00 0 50 100 150 200 0 50 100 150 TC [°C] TC [°C] 3 Safe operating area I D=f(V DS); T C=25°C; D =0; one channel active parameter: t p 100 1 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 ID [A] ZthJC [K/W] 10 µs 0.5 10 100 100 µs 0.1 0.05 1 10-1 0.01 1 ms single pulse 200 0.1 0.1 Rev. 1.1 1 10 VDS [V] 10-2 100 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2015-04-13 IPG20N10S4-36A 5 Typ. output characteristics5) I D=f(V DS); T j=25°C parameter: V GS 80 10 V 60 6 Typ. drain-source on-state resistance5) R DS(on)=f(I D); T j=25°C parameter: V GS 90 7V 5V 5.5 V 6V 80 70 ID [A] RDS(on) [mW] 60 40 6 V 50 5.5 V 40 20 5V 30 7V 10 V 0 20 012345 0 VDS [V] 20 40 60 ID [A] 7 Typ. transfer characteristics5) I D=f(V GS); V DS=6V parameter: T j 8 Typ. drain-source on-state resistance5) R DS(on)=f(T j); I D=17A; V GS=10V 80 75 -55 °C 25 °C 65 60 175 °C 55 80 40 45 ID [A] RDS(on) [mW] 35 20 25 0 345678 VGS [V] 15 -60 -20 20 60 100 140 180 Tj [°C] Rev. 1.1 page 5 2015-04-13 IPG20N10S4-36A 9 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 4 10 Typ. Capacitances5) C =f(V DS); V GS=0V; f =1MHz 104 3.5 VGS(th) [V] C [pF] 3 160µA 2.5 16µA 2 103 102 Ciss Coss 1.5 1 -60 -20 20 60 100 140 180 Tj [°C] 101 0 5 10 15 20 VDS [V] 11 Typical forward diode characteristicis5) I F=f(VSD) parameter: T j 102 12 Avalanche characteristics5) I A S= f(t AV) parameter: Tj(start) 100 Crss 25 30 IF [A] IAV [A] 101 175 °C 25 °C 10 150 °C 100 °C 25 °C 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] 0.1 1 Rev. 1.1 page 6 10 100 tAV [µs] 1000 2015-04-13 IPG20N10S4-36A 13 Avalanche energy5) E AS=f(.


IL7550 IPG20N10S4-36A IPZ40N04S5-5R4


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)