IPZ40N04S5-8R4

IPZ40N04S5-8R4 OptiMOS™-5 Power-Transistor Product Summary Features OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 8.4 mW 40 A PG-TSDSON-8 N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 1 175°C operating temperature Green Product (RoHS compliant) 1 100% Avalanche tested Type IPZ40N04S5-8R4 Package PG-TSDSON-8 Marking 5N0484 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=20A I AS - V GS - P tot T C=25°C T j, T stg - Value 40 33 160 24 40 ±20 34 -55 ... +175 Unit A mJ A V W °C Rev. 1.0 page 1 2015-05-06 IPZ40N04S5-8R4 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) min. Values typ. Unit max. - - 4.4 K/W - - 60 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=10µA I DSS V DS=40V, V GS=0V, T j=25°C ...