PJD14P06-AU

PPJD14P06-AU 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-7A<115mΩ  RDS(ON), [email protected],[email protected]<160mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Acqire quality system certificate : TS16949  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0104 ounces, 0.297grams TO-252 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current Single Pulse Avalanche Energy (Note 2) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient (Note 1) VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA  Limited only By Maximum Junction Temperature LIMIT -60 +20 -14 -32 42 45 0.3 -55~175 3.33 62.5 UNITS V V A A mJ W W/ oC oC oC/W August 3,2015-REV.00 Page 1 PPJD14P06-AU Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynam...