Silicon Diode
1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. ...
Description
1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
Low forward resistance. (r f = 0.9 Ω max) Suitable for 5mm pitch high speed automatical insertion. Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS110 Cathode band Verdure Package Code MHD
Outline
1 Cathode band
2
1. Cathode 2. Anode
1SS110
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Value 35 100 175 –65 to +175 Unit V mA °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse voltage Reverse current Capacitance Forward resistance Symbol VF VR IR C rf Min — 35 — — — Typ — — — — — Max 1.0 — 0.1 1.2 0.9 Unit V V µA pF Ω Test Condition I F = 10mA I R = 10µA VR = 25V VR = 6V, f = 1MHz I F = 2mA, f = 100MHz
1SS110
10
–2
10 Forward current I F (A)
–4
10–6
10
–8
10
–10
10
–12
0
0.2
0.4
0.6
0.8
1.0
Forward voltage VF (V)
Fig.1 Forward current Vs. Forward voltage
10 f = 1MHz
Capacitance C (pF)
1.0
10
–1
1.0
10 Reverse voltage VR (V)
40
Fig.2 Capacitance Vs. Reverse voltage
1SS110
10
2
f = 100MHz
Forward resistance r f (Ω )
10
1.0
10
–1
10
–2
10
–4
10–3
10–2
10
–1
Forward current I F (A)
Fig.3 Forward resistance Vs. Forward current
1SS110
Package Dimensions
Unit: mm
26.0 Min
2.4 Max
26.0 Min φ 2.0 Max
φ 0.4
1
2 Cathode band (Verdure)
1 Cathode 2 Anode
HITACHI Code JED...
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