PPJD14P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<1...
PPJD14P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<140mΩ RDS(ON),
[email protected],ID@-3A<170mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case:TO-252 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC TC=100oC
Pulsed Drain Current(Note 1)
TC=25oC
Power Dissipation
TC=25oC TC=100oC
Continuous Drain Current
TA=25oC TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5) Junction to Case Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL VDS VGS ID IDM PD
ID
PD
EAS TJ,TSTG
RθJC RθJA
LIMIT
-100 +20 -14 -9 -40 60 24 -2.5 -2.0 2.0 1.3 20 -55~150 2.1 62.5
UNITS V V
A
W A A W mJ oC oC/W
July 21,2015-REV.00
Page 1
PPJD14P10A
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Curre...
