PJD50N10AL

PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features  RDS(ON) , VGS@10V, ID@20A<25mΩ  RDS(ON) , [email protected], ID@15A<28.5mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data TO-252  Case : TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC TC=100oC Pulsed Drain Current (Note 1) TC=25oC Power Dissipation TC=25oC TC=100oC Continuous Drain Current TA=25oC TA=70oC Power Dissipation TA=25oC Power Dissipation TA=70oC Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal Resistance(Note 4,5) Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT 100 +20 42 26 150 83 33 6.3 5.1 2.0 1.3 63.4 -55~150 1.5 62.5 UNITS V V A W A A W mJ oC oC/W July 9,2015-REV.00 Page 1 PPJD50N10AL Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current...