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PJL9454A

Pan Jit International

100V N-Channel Enhancement Mode MOSFET

PPJL9454A 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 5A SOP-8 Features  RDS(ON) , VGS@10V, ID@5...


Pan Jit International

PJL9454A

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PPJL9454A 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 5A SOP-8 Features  RDS(ON) , VGS@10V, ID@5A<50mΩ  RDS(ON) , [email protected], ID@3A<55mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOP-8 package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0029 ounces, 0.083 grams  Marking: L9454A Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25oC TA=70oC Pulsed Drain Current (Note 1) Power Dissipation TA=25oC TA=70oC Single Pulse Avalanche Energy (Note 5 ) Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient, t≦10s (Note 6) SYMBOL VDS VGS ID IDM PD EAS TJ,TSTG RθJA LIMIT 100 +20 5 4 20 2.5 1.6 5 -55~150 50 UNITS V V A A W mJ oC oC/W July 10,2015-REV.00 Page 1 PPJL9454A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time T...




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