PJQ5474A

PPJQ5474A 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 18A Features  RDS(ON) , VGS@10V, ID@18A<50mΩ  RDS(ON) , [email protected], ID@15A<55mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN5060-8L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0028 ounces, 0.08 grams  Marking: Q5474A DFN5060-8L Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 5) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient, t<10s (Note 3) SYMBOL VDS VGS ID IDM EAS PD TJ,TSTG RθJC July 14,2015-REV.00 LIMIT 100 +20 18 36 16.2 52 416 -55~150 2.4 UNITS V V A A mJ W mW/ oC oC oC/W Page 1 PPJQ5474A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Ti...