PPJQ5476AL
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
42A
DFN5060-8L
Features
RDS(ON) , VGS@1...
PPJQ5476AL
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
42A
DFN5060-8L
Features
RDS(ON) , VGS@10V, ID@20A<25mΩ RDS(ON) ,
[email protected], ID@15A<28.5mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN5060-8L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0028 ounces, 0.08 grams Marking: Q5476AL
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC TC=100oC
Pulsed Drain Current (Note 1)
TC=25oC
Power Dissipation
TC=25oC TC=100oC
Continuous Drain Current
TA=25oC TA=70oC
Power Dissipation
TA=25oC TA=70oC
Single Pulse Avalanche Energy(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance(Note 4,5)
Junction to Case Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL VDS VGS ID IDM PD
ID
PD
EAS TJ,TSTG
RθJC RθJA
LIMIT
100 +20 42 26.6 150 83 33 6.5 5.2 2.0 1.3 63.4 -55~150 1.5 62.5
UNITS V V
A
W A A W mJ oC oC/W
July 14,2015-REV.00
Page 1
PPJQ5476AL
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Curre...